| Parameter | N-Channel MOSFET | P-Channel MOSFET |
|---|---|---|
| Charge Carriers | Electrons | Holes |
| Majority Carrier Mobility | High | Low |
| Drain Current (ID) | Higher | Lower |
| ON Resistance (RDS(on)) | Low | High |
| Switching Speed | Faster | Slower |
| Efficiency | Higher | Lower |
| Gate Voltage Required | Positive w.r.t Source | Negative w.r.t Source |
| Threshold Voltage (VTH) | Positive | Negative |
| Source Connection | Usually Ground | Usually +VCC |
| Drain Connection | Load Side | Load Side |
| Current Direction | Drain → Source (Conventional) | Source → Drain (Conventional) |
| Electron Flow | Source → Drain | Drain → Source |
| Power Handling | Higher | Lower |
| Cost | Cheaper | Costlier |
| Usage Frequency | More Common | Less Common |
| Fabrication Complexity | Easier | More Difficult |
| Symbol Arrow Direction | Arrow Out | Arrow In |
| Used In | SMPS, Motor Drives, Inverters | High-Side Switching |
| Condition | N-Channel MOSFET | P-Channel MOSFET |
|---|---|---|
| Gate = Source | OFF | OFF |
| VGS > VTH | ON | OFF |
| VGS < VTH | OFF | ON (Negative VGS) |
| Gate Polarity | Positive | Negative |
N = Not Pointing In
➡ Arrow points OUT
P = Pointing In
➡ Arrow points IN
| Parameter | MOSFET | JFET |
|---|---|---|
| Full Form | Metal Oxide Semiconductor Field Effect Transistor | Junction Field Effect Transistor |
| Gate Structure | Metal gate insulated by SiO₂ layer | PN Junction Gate |
| Input Impedance | Extremely High (10⁹–10¹⁵ Ω) | High (10⁷–10⁹ Ω) |
| Gate Current | Almost Zero | Very Small Reverse Leakage Current |
| Control Type | Voltage Controlled | Voltage Controlled |
| Mode of Operation | Enhancement & Depletion Modes | Depletion Mode Only |
| Normally ON/OFF | Enhancement MOSFET: Normally OFF | Normally ON |
| Gate Biasing | Positive/Negative depending on type | Reverse Biased Only |
| Switching Speed | Very High | High |
| Noise Performance | More Sensitive to Noise | Better Noise Immunity |
| Static Damage Sensitivity | Highly Sensitive to ESD | Less Sensitive |
| Power Consumption | Very Low | Low |
| Fabrication Complexity | More Complex | Simpler |
| Drain Resistance | Lower | Higher |
| Current Capability | Higher | Lower |
| Applications | SMPS, CMOS, VLSI, Power Electronics | Amplifiers, RF Circuits |
| Symbol Feature | Insulated Gate | PN Junction Gate |
| Carrier Type | Majority Carrier Device | Majority Carrier Device |
| Frequency Response | Excellent | Good |
| Popularity | Most Widely Used | Limited Use Today |
| Parameter | Enhancement MOSFET (E-MOSFET) | Depletion MOSFET (D-MOSFET) |
|---|---|---|
| Channel at VGS = 0 | No Channel Present | Channel Already Present |
| Normal State | Normally OFF | Normally ON |
| Drain Current at VGS = 0 | ID = 0 | ID = IDSS (Maximum) |
| Operation Mode | Enhancement Only | Enhancement + Depletion Both |
| Gate Voltage Required for Conduction | Required | Not Required |
| N-Channel Gate Voltage | Positive VGS | Positive or Negative VGS |
| P-Channel Gate Voltage | Negative VGS | Negative or Positive VGS |
| Symbol | Broken Channel Line | Continuous Channel Line |
| Fabrication | Easier | More Complex |
| Power Electronics Usage | Very Common | Rare |
| CMOS ICs | Widely Used | Not Used |
| Switching Applications | Excellent | Limited |
| Input Impedance | Very High | Very High |
| Gate Current | Nearly Zero | Nearly Zero |
| Popularity | Most Common MOSFET | Less Common |